【plasma-immersion_ion_implantation】什么意思_英语plasma-immersion_ion_implantation的翻译_音标_读音_用法_例句_在线翻译

Plasma-immersion ion implantation

等离子体浸没离子注入（等离子体浸没离子注入是一种表面改性技术，通过高电压脉冲直流或纯直流电源将等离子体中的加速离子作为掺杂物注入基体或半导体芯片的靶。真空室中可使用不同的等离子体源，如电子回旋共振等离子体源和氦等离子体源。真空室可分为二极式和三极式）

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abstract: Plasma-immersion ion implantation (PIII) or pulsed-plasma doping (pulsed PIII) is a surface modification technique of extracting the accelerated ions from the plasma by applying a high voltage pulsed DC or pure DC power supply and targeting them into a suitable substrate or electrode with a semiconductor wafer placed over it, so as to implant the it with suitable dopants. The electrode is a cathode for an electropositive plasma, while it is an anode for an electronegative plasma.

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Helium ion was implanted by plasma immersion ion implantation technology.

氦离子用等离子体浸没离子注入技术注入硅片中。

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A new plasma immersion ion implantation (PIII) technique was employed for implanting nitrogen ions in steel 45. The composition, microstructure and property of the implanted layer were analyzed.

采用等离子体浸没式离子注入对45钢进行氮离子注入。对注入表层的成分、组织和性能进行了分析。

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Titanium nitride(TiN) hard protective films were fabricated on AISI52100 bearing steel surface employing plasma immersion ion implantation and deposition(PIIID) technique.

用等离子体浸没离子注入与沉积（PIIID）复合强化新技术在AISI52100轴承钢基体表面成功合成了硬而耐磨的氮化钛薄膜。

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